d d ata sheet product specification august 2001 discrete semiconductors byw29e series rectifier diodes ultrafast, rugged
semiconductors product specification rectifier diodes byw29e series ultrafast, rugged features symbol quick reference data ? low forward volt drop v r = 100v/ 150 v/ 200 v ? fast switching ? soft recovery characteristic v f 0.895 v ? reverse surge capability ? high thermal cycling performance i f(av) = 8 a ? low thermal resistance i rrm 0.2 a t rr 25 ns general description pinning sod59 (to220ac) ultra-fast, epitaxial rectifier diodes pin description intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode the byw29e series is supplied in the conventional leaded sod59 tab cathode (to220ac) package. limiting values limiting values in accordance with the absolute maximum system (iec 134) symbol parameter conditions min. max. unit byw29e -100 -150 -200 v rrm peak repetitive reverse - 100 150 200 v voltage v rwm working peak reverse - 100 150 200 v voltage v r continuous reverse voltage - 100 150 200 v i f(av) average rectified forward square wave; = 0.5; t mb 128 ?c - 8 a current i frm repetitive peak forward square wave; = 0.5; t mb 128 ?c - 16 a current i fsm non-repetitive peak forward t = 10 ms - 80 a current t = 8.3 ms - 88 a sinusoidal; with reapplied v rrm(max) i rrm peak repetitive reverse t p = 2 s; = 0.001 - 0.2 a surge current i rsm peak non-repetitive reverse t p = 100 s - 0.2 a surge current t j operating junction - 150 ?c temperature t stg storage temperature - 40 150 ?c esd limiting value symbol parameter conditions min. max. unit v c electrostatic discharge human body model; - 8 kv capacitor voltage c = 250 pf; r = 1.5 k k a 12 1 tab 2 august 2001 1 rev 1.400
semiconductors product specification rectifier diodes byw29e series ultrafast, rugged thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance junction - - 2.7 k/w to mounting base r th j-a thermal resistance junction in free air - 60 - k/w to ambient electrical characteristics t j = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v f forward voltage i f = 8 a; t j = 150?c - 0.8 0.895 v i f = 8 a - 0.92 1.05 v i f = 20 a - 1.1 1.3 v i r reverse current v r = v rwm -210 a v r = v rwm ; t j = 100?c - 0.2 0.6 ma q rr reverse recovered charge i f = 2 a; v r 30 v; -di f /dt = 20 a/ s-411nc t rr1 reverse recovery time i f = 1 a; v r 30 v; -di f /dt = 100 a/s2 02 5n s t rr2 reverse recovery time i f = 0.5 a to i r = 1 a; i rec = 0.25 a - 15 20 ns v fr forward recovery voltage i f = 1 a; di f /dt = 10 a/s- 1 - v august 2001 2 rev 1.400
semiconductors product specification rectifier diodes byw29e series ultrafast, rugged fig.1. definition of t rr1 , q s and i rrm fig.2. definition of v fr fig.3. circuit schematic for t rr2 fig.4. definition of t rr2 fig.5. maximum forward dissipation p f = f(i f(av) ); square current waveform where i f(av) =i f(rms) x d. fig.6. maximum forward dissipation p f = f(i f(av) ); sinusoidal current waveform where a = form factor = i f(rms) / i f(av) . q s 100% 10% time di dt f i r i f i rrm t rr i = 1a r rec i = 0.25a 0a trr2 0.5a if ir time time v f v fr v f i f 024681012 0 2 4 6 8 10 12 d = 1.0 0.5 0.2 0.1 byw29 if(av) / a pf / w d = t p t p t t t i tmb(max) / c 150 143 136 129 122 115 108 vo = 0.791 v rs = 0.013 ohms shunt current to scope d.u.t. voltage pulse source r 012345678 0 1 2 3 4 5 6 7 8 a = 1.57 1.9 2.2 2.8 4 byw29 if(av) / a pf / w tmb(max) / c 150 146.5 143 139.5 136 132.5 129 125.5 122 vo = 0.791 v rs = 0.013 ohms august 2001 3 rev 1.400
semiconductors product specification rectifier diodes byw29e series ultrafast, rugged fig.7. maximum t rr at t j = 25 ?c. fig.8. maximum i rrm at t j = 25 ?c. fig.9. typical and maximum forward characteristic i f = f(v f ); parameter t j fig.10. maximum q s at t j = 25 ?c. fig.11. transient thermal impedance; z th j-mb = f(t p ). 1 10 trr / ns 1 10 100 1000 100 dif/dt (a/us) if=1a if=10a 10 1.0 1.0 10 100 -dif/dt (a/us) qs / nc if=10a 5a 2a 1a 100 10 1 0.1 0.01 irrm / a 1 10 100 -dif/dt (a/us) if=1a if=10a 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 pbyl1025 pulse width, tp (s) transient thermal impedance, zth j-mb (k/w) d = t p t p t t p t d 0 1 2 30 20 10 0 typ max if / a 0.5 1.5 vf / v tj=150 c tj=25 c byw29 august 2001 4 rev 1.400
semiconductors product specification rectifier diodes byw29e series ultrafast, rugged mechanical data dimensions in mm net mass: 2 g fig.12. to220ac; pin 1 connected to mounting base. notes 1. refer to mounting instructions for to220 envelopes. 2. epoxy meets ul94 v0 at 1/8". references outline version european projection issue date iec jedec eiaj sod59 97-06-11 2-lead to-220 d d 1 q p l 12 l 2 (1) b 1 e q b 0 5 10 mm scale plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead to-220 sod59 unit a 1 b 1 d 1 e p mm 5.08 qq dimensions (mm are the original dimensions) a b d c l 2 (1) 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.7 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 l 1 e l a e a 1 c l 1 note 1. terminals in this zone are not tinned. august 2001 5 rev 1.400
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